| PART |
Description |
Maker |
| V436516R04VATG-10PC |
3.3 VOLT 16M x 64 using 8M x 16 PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| UG42S6442HSG UG42S6442HSG-PL UG42S6442HSG-PH |
16M BYTES (2M X 64 BITS) PC100 SDRAM UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers
ETC
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HYB39S128400CT-7 HYB39S128160CT-7 HYB39S128800CT-7 |
128Mbit Synchronous DRAMs
SDRAM Components - 128Mb (16Mx8) PC133 3-3-3
SDRAM Components - 128Mb (8Mx16) PC133 3-3-3
SDRAM Components - 128Mb (32Mx4) PC133 3-3-3
128-MBit Synchronous DRAM
|
Infineon
|
| V43648S04VTG-10PC |
3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64位高性能无缓冲器PC100 SDRAM模块)
3.3 Volt 8M x 64 High Performance PC100 SDRAM Module with Unbuffered(3.3V 8M*64浣???ц?????插?PC100 SDRAM妯″?)
|
Mosel Vitelic, Corp.
|
| M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M366S1724CT0-C1L M366S1724CT0-C1H |
PC100 Unbuffered DIMM(168pin) SPD Specification(128Mb C-die base)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| HB52R649E1U-B6B HB52R649E1U-A6B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
|
Elpida Memory
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
| V436516Z04VATG-10PC |
ER 10C 10#16 SKT RECP 3.316米x 64高性能PC100的无缓冲的SODIMM
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SODIMM
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| HB52R329E22-A6F HB52R329E22-B6F HB52R329E22-F |
256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM
256 MB Registered SDRAM DIMM 32-Mword 隆驴 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M 隆驴 4 Components) PC100 SDRAM
|
Elpida Memory
|
